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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5039 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO = 400V(Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature 3 A PC 70 W TJ 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= 1mA; IE= 0 IC= 5mA; IB= 0 B KSC5039 MIN 800 400 7 TYP. MAX UNIT V V V IE= 1mA; IC= 0 IC= 2.5A; IB= 0.5A IC= 2.5A; IB= 0.5A VCB= 500V; IE= 0 VEB= 7V; IC=0 IC= 0.3A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IC= 0.1A ; VCE= 5V 1.5 2.0 10 10 10 40 10 V V A A pF MHz Switching Times; Resistive Load ton ts tf Turn-On Time Storage Time Fall Time IC= 2.5A; IB1= -IB2= 0.5A; VCC= 150V 1.0 3.0 0.8 s s s isc Websitewww.iscsemi.cn 2 |
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